Service Hotline:+86-0769-3389 8888 Recently, a Chinese research team achieved a breakthrough in enhancing the efficiency of gallium nitride (GaN)-based green MiniLED chips. They successfully resolved a long-standing technical challenge: the persistently low external quantum efficiency (EQE) of green MiniLEDs caused by the "Green Gap" phenomenon. This achievement is regarded by the industry as a pivotal step toward elevating the performance of MiniLEDs—particularly their green light components—to new heights, thereby significantly bolstering the competitiveness of MiniLED technology within the high-end display market.
According to reports, the research team achieved a synergistic optimization across several core dimensions—including reducing defect density, improving carrier injection uniformity, and enhancing light extraction efficiency—by innovatively optimizing the quantum well structure design and epitaxial growth processes of indium gallium nitride (InGaN) materials. Their specific technical approach involved employing novel stress management techniques to mitigate lattice mismatch, as well as introducing specialized interface engineering and carrier confinement structures. These measures effectively suppressed efficiency droop, resulting in a significant improvement in both the external quantum efficiency and optical power output of green MiniLEDs under typical operating currents.
As a critical component of the RGB primary color triad, the luminous efficiency of green light directly impacts the color fidelity, brightness, and overall energy efficiency of full-color displays. Previously, the efficiency shortcomings of green MiniLEDs had, to some extent, slowed the adoption rate of MiniLED display technology in sectors demanding uncompromising image quality—such as high-end televisions, professional monitors, and augmented/virtual reality (AR/VR) devices. With continued breakthroughs at key technical junctures—such as in green light emission—China's MiniLED industry is progressively establishing core competencies across the entire value chain, spanning from chip manufacturing and packaging to end-use applications. This trajectory positions the industry to potentially achieve a "curve-overtaking" maneuver—surpassing established players—in the global race for next-generation display technologies.
In response to this industry-wide breakthrough, Jinghan Optoelectronics has been closely monitoring relevant technological advancements. The company is committed to continuously increasing its R&D investment in core new display technologies and advanced packaging solutions, aiming to consolidate and expand its technological leadership within the high-end display industry value chain.



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